Yale School of Engineering & Applied Science Faculty and Staff
Yale School of Engineering & Applied Science Faculty
Electrical EngineeringApplied Physics

Mark A. Reed


Harold Hodgkinson Professor of Engineering & Applied Science & Electrical Engineering

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      (203) 432-6420

Ph.D., Syracuse University

RESPONSIBILITIES
Associate Director, Yale Institute for Nanoscience and Quantum Engineering
Member of CRISP Center
 
INTERESTS
Investigation of electronic transport in nanoscale and mesoscopic systems, artificially structured materials and devices, molecular scale electronic transport, plasmonic transport in nanostructures, and chem/bio nanosensors.
 

AWARDS & HONORS

  • Fellow, IEEE  (2009)
  • IEEE Pioneer Award in Nanotechnology (2007)
  • Fellow, Canadian Institute for Advanced Research (2006)
  • Fellow, American Physical Society (2003)
  • YSEA Award for Advancement of Basic and Applied Science (2002)
  • Fujitsu ISCS Quantum Device Award (2001)
  • Syracuse University Distinguished Alumni Award (2000)
  • Harold Hodgkinson Professor of Engineering and Applied Science, Yale University (1999)
  • DARPA ULTRA Most Significant Technical Achievement Award (1997)
  • Connecticut Academy of Science and Engineering (1996-present)
  • Who's Who in the World (2000-present); in America (2000-present); in American Science and Engineering (1995-present)
  • Kilby Young Innovator Award (1994)
  • Senior Member IEEE
  • Fortune Magazine's 12 most promising young scientists (1990)
  • Senior Member Technical Staff, TI (1988).

REPRESENTATIVE PUBLICATIONS

  • M. A. Reed, J. N. Randall, R. J. Aggarwal, R. J. Matyi, T. M. Moore, and A. E. Wetsel, “Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure”, Phys. Rev. Lett. 60, 535 (1988). (ISI citations (3/09): 579).
  • M. A. Reed, W. R. Frensley, R. J. Matyi, J. N. Randall, and A. C. Seabaugh, “Realization of a Three-Terminal Resonant Tunneling Device : The Bipolar Quantum Resonant Tunneling Transistor,” Appl. Phys. Lett. 54, 1034 (1989).
  • M.R. Deshpande, J.W. Sleight, M.A. Reed, R.G. Wheeler, and R.J. Matyi,“Spin splitting of single 0D impurity states in semiconductor heterostructure quantum wells”, Phys. Rev. Lett. 76, 1328 (1996).
  • M.A. Reed, C. Zhou, C.J. Muller, T.P. Burgin, and J.M. Tour, “Conductance of a molecular junction”, Science 278, 252 (1997). (ISI citations (3/09): 1577).
  • J. Chen, M. A. Reed, A. M. Rawlett, and J. M. Tour, “Large On-Off Ratios and Negative Differential Resistance in an Electronic Molecular Switch”, Science, 286, 1550 (1999). (ISI citations (3/09): 1293).
  • M. A. Reed, J. Chen, A. M. Rawlett, D. W. Price, and J. M. Tour, “Molecular Random Access Memory Cell”, Appl. Phys. Lett. 78,  3735 (2001).
  • Wenyong Wang, Takhee Lee, and M. A. Reed, “Mechanism of Electron Conduction In Self-Assembled Alkanethiol Monolayer Devices”, Phys. Rev. B 68, 035416 (2003).
  • W. Wang, T. Lee, I. Kretzschmar, and M.A. Reed, “Inelastic Electron Tunneling Spectroscopy of Alkanedithiol Self-Assembled Monolayers”, Nano Lett. 4, 643 (2004).
  • W. Wang, T. Lee, and M.A. Reed, “Elastic and Inelastic Electron Tunneling in Alkane Self-Assembled Monolayers”, J. Phys. Chem. B. 108, 18398 (2004). (cover, feature article).
  • E. Stern, J.F. Klemic, D.A. Routenberg, P.N. Wyrembak, D.B. Turner-Evans, A.D. Hamilton, D.A. LaVan, T.M. Fahmy, and M.A. Reed, “Label-free immunodetection with CMOS-compatible semiconducting nanowires”, Nature, 445, 519 (2007).
     
 PATENTS
 
  • "Mechanically Controllable Break (MCB) Transducer", 5751156, 1998: With Christian Muller and Chong Wu Zhou
  • "Method for forming a film by selective area MOCVD growth", US05728215, 1998
  • "Sub-Nanoscale Electronic Systems and Devices", US05589692, 1996
  • "Sub-nanoscale electronic systems and devices", US05475341, 1995
  • "Optically pumped quantum coupled devices", US05165065, 1992
  • "Three terminal tunneling device and method", US05059545, 1991
  • "Quantum-well logic using self-generated potentials", US04969018, 1990
  • "Three terminal tunneling device and method", US04959696, 1990
  • "Three-terminal quantum device", US04912531, 1990
  • "Binary superlattice tunneling device and method", US04851886, 1989
  • "Optically pumped quantum coupled devices", US04878104, 1989
  • "Quantum device output switch", US04799091, 1989
  • "Quantum-coupled device", EP00170044B1, 1989
  • "Process for fabricating quantum-well devices", US04783427, 1988
  • "Spatial light modulator", US04705361, 1987
  • "Process for fabricating quantum-well devices utilizing etch and refill techniques", US04575924, 1986
  • "Quantum device output switch", US04581621, 1986
 


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